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CSCDDeng XR, 2011, SURF COAT TECH, V206, P1007, DOI 10.1016/j.surfcoat.2011.03.107; Jang YS, 2010, J EUR CERAM SOC, V30, P2773, DOI 10.1016/j.jeurceramsoc.2010.05.019; Kim Y, 2012, J EUR CERAM SOC, V32, P3611, DOI 10.1016/j.jeurceramsoc.2012.04.044; Letts S A, 1981, Vac Sci Technol, V19, P739; MOULDER JF, 1992, HDB XRAY PHOT SPECTR; Snikroo A, 1999, Fusion Technol, V35, P212; SORARU GD, 1990, J MATER SCI, V25, P3886, DOI 10.1007/BF00582455; Stephens RB, 2002, FUSION SCI TECHNOL, V41, P226, DOI 10.13182/FST02-A17904; [唐翠兰 Tang Cuilan], 2017, [原子能科学技术, Atomic Energy Science and Technology], V51, P949; [肖建建 Xiao Jianjian], 2015, [原子能科学技术, Atomic Energy Science and Technology], V49, P2282; [杨文彬 YANG Wenbin], 2007, [强激光与粒子束, High Power Laser and Particle Beams], V19, P1659; 徐伟, 2015, 强激光与粒子束, V27, p062008(1; 刘梅芳, 2014, 强激光与粒子束, V26, p022017(1; 张颖, 2012, ICF用硅掺杂辉光放电聚合物薄膜的制备及其性能研究; 张颖, 2011, 物理学报, V60, p126501(1; 牛忠彩, 2012, 物理学报, V61, p106804(116685248545101453硅酸盐学报1446以四甲基硅(tetramethylsilane,TMS)、反式二丁烯(trans-2-butene,T_2B)和氢气为工作气源,采用化学气相沉积(CVD)-高温热解法,在不同TMS流量条件下制备了惯性约束聚变用SiC空心微球。对SiC空心微球的成分、表面形貌、表面粗糙度、球形度以及壁厚均匀性等进行了表征,分析了不同TMS流量对SiC空心微球成分及性能的影响。研究表明:在SiC空心微球中,C与Si两元素的原子比随TMS流量增加呈现逐渐减小的趋势。微球的表面均方根粗糙度随TMS流量的增加先减小后增加,当TMS流量为0.25mL/min时,表面均方根粗糙度减小至78nm。微球的球形度随TMS流量的增加不发生明显变化,且均优于99%,而壁厚均匀性随TMS流量的增加先增加后减小,当TMS流量为0.25mL/min时,壁厚均匀性可达96%。2017silicon carbide; hollow microsphere; tetramethyl silane; surface roughness; spherical degreeSilicon carbide (SiC) hollow microspheres were fabricated at different tetramethyl silane (TMS) flowrates via chemical vapor deposition (CVD)-pyrolysis with Si(CH_3)_4+C_4H_8+H_2 as a precursor gases. The chemical composition, surface morphology, surface roughness, spherical degree and wall thickness uniformity of SiC hollow microspheres were characterized. Effect of TMS flowrate on the composition and properties of the SiC hollow microspheres was investigated. The results show that C/Si atomic ratio reduces with the increase of TMS flowrate. The surface root mean square roughness (R_q) of SiC hollow microspheres firstly decreases and then increases with the increase of TMS flowrate. Rq decreases to 78 nm at the TMS flowrate of 0.25 mL/min. The spherical degree of SiC hollow microspheres does not change significantly with the increase of TMS flowrate. The spherical degree of all the samples is greater than 99%. The wall thickness uniformity of SiC hollow microspheres firstly increases and then decreases with the increase of TMS flow rate, and it increases to 98% at the TMS flowrate of 0.25 mL/min.Effect of Tetramethyl Silane Flowrate on Composition and Properties of SiC Hollow Microspheres期刊论文四甲基硅流量对SiC空心微球成分及性能的影响Chinese碳化硅; 空心微球; 四甲基硅; 表面粗糙度; 球形度唐翠兰; 王涛; 黄景林; 何小珊; 刘磊; 王红斌; 何智兵 CSCD:6042633
中文题目: 四甲基硅流量对SiC空心微球成分及性能的影响
外文题目: Effect of Tetramethyl Silane Flowrate on Composition and Properties of SiC Hollow Microspheres
作者: 唐翠兰; 王涛; 黄景林; 何小珊; 刘磊; 王红斌; 何智兵
刊名: 硅酸盐学报
年: 2017 卷: 45 期: 10 页: 1446--1453
中文关键词:
碳化硅; 空心微球; 四甲基硅; 表面粗糙度; 球形度
英文关键词:
silicon carbide; hollow microsphere; tetramethyl silane; surface roughness; spherical degree
中文摘要:
英文摘要:
文献类型: 期刊论文
正文语种: Chinese
收录类别: CSCD  
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